Lateral Patterning Of Semiconductor Superlattice Heterostructures By Epitaxial Growth On Nonplanar Substrates

E. Kapon; C. P. Yun; D. M. Hwang; M. C. Tamargo; J. P. Harbison; R. Bhat

doi:10.1117/12.947367

15 August 1988 Lateral Patterning Of Semiconductor Superlattice Heterostructures By Epitaxial Growth On Nonplanar Substrates

E. Kapon, C. P. Yun, D. M. Hwang, M. C. Tamargo, J. P. Harbison, R. Bhat

Author Affiliations +

Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947367
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

A new technique for lateral patterning of quantum well and superlattice semiconductor heterostructures has been investigated. The technique utilizes the lateral thickness variations exhibited by thin epitaxial films grown on nonplanar substrates, and the strong dependence of the confinement energy on the quantum well thickness in order to achieve lateral patterning of the effective bandgap and related physical properties. The growth of GaAs/A1GaAs quantum well heterostructures on nonplanar GaAs substrates using molecular beam epitaxy and organometallic chemical vapor deposition was characterized by transmission electron microscopy. Conditions for obtaining substantial lateral variations in the quantum well thickness have been identified. Novel semiconductor lasers whose performance relies on this patterning technique have been demonstrated. These devices exhibit new and improved features, including very low threshold currents (as low as 1.8 mA for uncoated devices at room temperature), and quantum-wire-like active regions.

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E. Kapon, C. P. Yun, D. M. Hwang, M. C. Tamargo, J. P. Harbison, and R. Bhat "Lateral Patterning Of Semiconductor Superlattice Heterostructures By Epitaxial Growth On Nonplanar Substrates", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); https://doi.org/10.1117/12.947367

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