15 August 1988 Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth
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Proceedings Volume 0944, Growth of Compound Semiconductor Structures II; (1988) https://doi.org/10.1117/12.947357
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
Molecular Mechanics and Monte Carlo Methods have been applied to the modelling of a heteroepitaxy of CdTe on GaAs presenting a lattice mismatch of 14.7%. The growth of one monolayer has been simulated. The model is restricted to the analysis of defect creation at points of high strain. Creation of stable and unstable defects have been observed from the beginning of the growth in the case of a "soft" substrate.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Esteve, D. Esteve, M. Djafari - Rouhani, M. Djafari - Rouhani, V. V. Pham, V. V. Pham, A. Amrani, A. Amrani, J. J. Simonne, J. J. Simonne, } "Molecular Mechanics And Monte Carlo Simulations, A Tool To Analyse Defects Formation In Heteroepitaxial Growth", Proc. SPIE 0944, Growth of Compound Semiconductor Structures II, (15 August 1988); doi: 10.1117/12.947357; https://doi.org/10.1117/12.947357
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