18 December 2014 Electrical properties of ALD HfO2 (EOT 0.47 nm)
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944004 (2014) https://doi.org/10.1117/12.2181009
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
The electric properties of the dielectric stack based hafnium were characterized by C-V and I-V curves before and after annealing. The lowest equivalent oxide thickness (EOT) was obtained after PMA and equals to 0.47 nm. The leakage current for this sample at 1V gate voltage was about 10 A/cm2. Charge density in the volume of high-k was extremely high (1.61·1018 cm-3). Obtained density of interface charge is equal to moderate value 1.03·1012 cm-2.
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A. Molchanova, A. Molchanova, A. Rogozhin, A. Rogozhin, } "Electrical properties of ALD HfO2 (EOT 0.47 nm)", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944004 (18 December 2014); doi: 10.1117/12.2181009; https://doi.org/10.1117/12.2181009
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