18 December 2014 Influence of doping on the crystallization kinetics of Ge-Sb-Te thin films for phase-change memory application
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944005 (2014) https://doi.org/10.1117/12.2181906
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
Crystallization kinetics in thin films of Ge2Sb2Te5 doped by Bi and Ti was studied. It has been shown that introduction of these impurities may have an impact on the kinetic parameters of the crystallization process. The possible recording and storage times of devices based on investigated materials were evaluated. It was shown that GST225 + 0,5 wt. % Bi has the best characteristics among the studied materials. Estimations showed that this composition can provide switching time of the phase-change memory cells less than 1 ns and it is extremely stable at room temperatures which is important for the reliable storage of information in memory cells.
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Alexey A. Sherchenkov, Alexey A. Sherchenkov, Sergey A. Kozyukhin, Sergey A. Kozyukhin, Alexey V. Babich, Alexey V. Babich, Yuri I. Shtern, Yuri I. Shtern, Rostislav E. Mironov, Rostislav E. Mironov, } "Influence of doping on the crystallization kinetics of Ge-Sb-Te thin films for phase-change memory application", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944005 (18 December 2014); doi: 10.1117/12.2181906; https://doi.org/10.1117/12.2181906
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