18 December 2014 Nanostructured chalcogenide materials for memory switching devices
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944007 (2014) https://doi.org/10.1117/12.2179474
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
A copper sulfide and bismuth sulfide thin films were deposited on Si/Ti substrate by successive ionic layer adsorption and reaction method at room temperature, using cupric chloride, bismuth chloride, complexing Na2EDTA and sodium sulfide aqueous solutions as precursors. The surface morphology, structural and electrical properties of the as-deposited films were investigated by scanning electron and atomic force microscopy, energy dispersive X-ray analysis (EDS), and 2-point probe methods. The films were found to be amorphous, rough with thickness 30 nm and 20 nm for CuSx and BiSx, respectively. Average atomic percentage of Cu:S and Bi:S in the as-deposited films was calculated as 1:1.5 and 2.3:3. It was noted that films possess resistive switching behavior. Ionic conductivity of the CuSx film was found to be 25,8·10-3 Ohm-1·cm-1 . Ionic conductivity of the BiSx film was found to be 16·10-3 Ohm-1·cm-1. Set voltages UON defined by I-V curves were found to be in the range 0,75-0,8 V/cm for both films. Reset voltages UOFF were found to be in the range 0,6-0,7 V/cm for both films. Thus, formed films can be used as active layers for memory devices application.
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O. Pyatilova, S. Gavrilov, R. Rozanov, A. Zheleznyakova, A. Belov, V. Shevyakov, "Nanostructured chalcogenide materials for memory switching devices", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944007 (18 December 2014); doi: 10.1117/12.2179474; https://doi.org/10.1117/12.2179474
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