18 December 2014 TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers
Author Affiliations +
Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944009 (2014) https://doi.org/10.1117/12.2180901
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
A study of copper (Cu) diffusion into silicon substrates through TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated based on an experimental approach. TaNx and Ta/graded Ta(N)/TaN thin films were deposited by magnetron sputtering under argon (Ar) and Ar-nitrogen (N) plasma. The influence of the N2 partial pressure on the microstructure and the electrical properties is reported. The efficiency of TaNx layers and Ta/graded Ta(N)/TaN multilayer diffusion barriers was investigated after annealing at temperatures between 300 and 600◦C in Ar.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
I. Khorin, I. Khorin, A. Rogozhin, A. Rogozhin, N. Orlikovsky, N. Orlikovsky, V. Kalnov, V. Kalnov, } "TaNx and Ta/graded Ta(N)/TaN multilayer diffusion barriers", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944009 (18 December 2014); doi: 10.1117/12.2180901; https://doi.org/10.1117/12.2180901
PROCEEDINGS
9 PAGES


SHARE
Back to Top