18 December 2014 Different methods of forming multicomponent metal sulfide by SILAR-techniques
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400I (2014) https://doi.org/10.1117/12.2180700
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
The features of the formation of multi-component metal sulfide films (Cu2ZnSnS4 and Cu2SnS3) formed by various methods SILAR technology were studied. Using different investigate methods the comparative analysis of the properties and composition of the films were carry out. The formation of a multi-component film in the mixed cationic solution is accompanied by additional processes in the solution and by the appearance of complex compounds. This factors has a strong influence on the composition and purity of the formed films. The characteristics of the solar cell test structures with ultrathin absorbing layer based on Cu2ZnSnS4 and Cu2SnS3 were obtained. It’s necessity to introduce an interlayer and make more carefully study of the composition and interface of the absorber layer.
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S. Gavrilov, S. Gavrilov, A. Zheleznyakova, A. Zheleznyakova, A. Dronov, A. Dronov, A. Presnukhina, A. Presnukhina, E. Popova, E. Popova, } "Different methods of forming multicomponent metal sulfide by SILAR-techniques ", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400I (18 December 2014); doi: 10.1117/12.2180700; https://doi.org/10.1117/12.2180700
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