Some peculiarities of the new method of a relief creating by the direct electron-beam etching of resist

M. A Bruk; E. N. Zhikharev; D. R. Streltsov; V. A. Kalnov; A. V. Spirin; A. E. Rogozhin

doi:10.1117/12.2179993

18 December 2014 Some peculiarities of the new method of a relief creating by the direct electron-beam etching of resist

M. A Bruk, E. N. Zhikharev, D. R. Streltsov, V. A. Kalnov, A. V. Spirin, A. E. Rogozhin

Author Affiliations +

Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400J (2014) https://doi.org/10.1117/12.2179993
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation

Abstract

This paper presents some new results concerning the mechanism, characteristics and feasibility for the suggested by the authors direct method of image formation in some positive resists directly during exposure by the electron beam in a vacuum (dry method of electron-beam etching resist - method DEBER). For PMMA resist as an example it has been shown in particular that the method DEBER very convenient for obtaining a relief micro and nanostructures with a rounded profile cross-section (including spherical, aspheric, sinusoidal etc.) in the PMMA resist. The examples presented of process conditions influence on the form of obtained relief structures. The examples are given to obtain spatial 3Dstructures with good accuracy by Z-axis and with good surface roughness. In general, according to the authors, the data presented indicate significant opportunities for applying the method DEBER, in particular for the manufacture of the optoelectronics elements (diffraction gratings, microlenses, focusers, optical waveguides, anti-reflective coatings, and others.).

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M. A Bruk, E. N. Zhikharev, D. R. Streltsov, V. A. Kalnov, A. V. Spirin, and A. E. Rogozhin "Some peculiarities of the new method of a relief creating by the direct electron-beam etching of resist", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400J (18 December 2014); https://doi.org/10.1117/12.2179993

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