18 December 2014 Formation of fast neutral beams and their using for selective etching
Author Affiliations +
Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400K (2014) https://doi.org/10.1117/12.2180434
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
Design and main characteristics of high performance fast neutral beam sources based on the ion sources with a cold cathode and a closed drift of electrons in crossed electrical and magnetic fields are described. The output beam is of practically 100% neutrality and has a low level of divergence (<5º) which provides long distance transportation of neutral beams. Etching results for Si, SiO2, W, NbN, TiN, and TiC with using the working gases Ar, CF4, C3F8, and SF6 are given. Preliminary results for the build-in charge decreasing effect for the Si/SiO2 interface under a neutral beam treatment are presented.
© (2014) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yu. P. Maishev, Yu. P. Maishev, S. L. Shevchuk, S. L. Shevchuk, V. P. Kudrya, V. P. Kudrya, } "Formation of fast neutral beams and their using for selective etching", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400K (18 December 2014); doi: 10.1117/12.2180434; https://doi.org/10.1117/12.2180434
PROCEEDINGS
13 PAGES


SHARE
Back to Top