18 December 2014 Carbon and fluorine co-implantation for boron diffusion suppression in extremely ultra shallow junctions
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400L (2014) https://doi.org/10.1117/12.2181006
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
Formation of ultra shallow p+-junctions in silicon by plasma immersion ion implantation were investigated. The effect of carbon and fluorine coimplantation were studied experimentally. Dependence of this effect from carbon concentration was studied, as well as positive role of multistep annealing for pure boron implanted samples.
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Andrey V. Miakonkikh, Andrey V. Miakonkikh, Aleksander E. Rogozhin, Aleksander E. Rogozhin, Valeriy I. Rudakov, Valeriy I. Rudakov, Konstantin V. Rudenko, Konstantin V. Rudenko, Vladimir F. Lukichev, Vladimir F. Lukichev, } "Carbon and fluorine co-implantation for boron diffusion suppression in extremely ultra shallow junctions", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400L (18 December 2014); doi: 10.1117/12.2181006; https://doi.org/10.1117/12.2181006
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