18 December 2014 Electrochemical recovery of damaged bonding area during failure analysis of the modern integrated circuits
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400N (2014) https://doi.org/10.1117/12.2181191
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
During failure analysis of modern integrated circuits it might be necessary to carry out investigations, including both analysis of the die topology and the input of electrical signals on its contact pads. However, during access to the die the contact pads might be damaged due to different factors. In present work several types of damaged contact pads and experimental investigations on its reconstructions by electrochemical deposition of silver and copper are discussed.
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D. N. Zubov, D. N. Zubov, E. A. Kelm, E. A. Kelm, R. A. Milovanov, R. A. Milovanov, G. Molodtsova, G. Molodtsova, } "Electrochemical recovery of damaged bonding area during failure analysis of the modern integrated circuits", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400N (18 December 2014); doi: 10.1117/12.2181191; https://doi.org/10.1117/12.2181191
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