18 December 2014 Monte Carlo simulation of boron doping profile of fin and trench structures by plasma immersion ion implantation
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400Y (2014) https://doi.org/10.1117/12.2181068
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
Plasma immersion ion implantation into fins and trenches at elevated pressures is simulated. In the present work we calculate boron concentration distribution in the sample accounting for ion scattering in plasma sheath and geometric shadowing effects (ions at certain angle of incidence couldn’t achieve shadowed part of trench wall and bottom). First, energy and angle distribution of ions passed through the plasma sheath to the sample surface is obtained. These data are used to calculate boron concentration distribution in the sample. Pressure range is 30-300 mTorr, plasma electron temperature 5 eV, plasma density 1010-1012 cm-3. The degree of conformity increases with the pressure raises and decreases with the density of plasma.
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Izat S. Shahsenov, Izat S. Shahsenov, Andrey V. Miakonkikh, Andrey V. Miakonkikh, Kostantin V. Rudenko, Kostantin V. Rudenko, } "Monte Carlo simulation of boron doping profile of fin and trench structures by plasma immersion ion implantation", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400Y (18 December 2014); doi: 10.1117/12.2181068; https://doi.org/10.1117/12.2181068
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