18 December 2014 Aluminum anodization process modeling approach
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94400Z (2014) https://doi.org/10.1117/12.2179218
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
We propose approach for modeling thin aluminum film anodization in three dimensions using variation of coupled lattice map on volumetric grid, which is capable of capturing porous and nonporous aluminum oxide growth and electrochemical polishing modes. Model derivation is based on Parkhutik and Shershulsky understandings. Numerical simulation results for various initial conditions are shown and compared to experimental data.
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Alexey N. Belov, Alexey N. Belov, Maksim I. Vorobiev, Maksim I. Vorobiev, Sergey A. Gavrilov, Sergey A. Gavrilov, Vasiliy I. Shevyakov, Vasiliy I. Shevyakov, } "Aluminum anodization process modeling approach", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94400Z (18 December 2014); doi: 10.1117/12.2179218; https://doi.org/10.1117/12.2179218
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