18 December 2014 Unified description of I-V characteristics in field-effect and bipolar transistors based on current density continuity equation solution
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944011 (2014) https://doi.org/10.1117/12.2180607
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
A general approach to derive the current-voltage characteristics both for field-effect and bipolar transistors has been proposed based on exact solution of current continuity equation in diffusion-drift approximation taking into account nonuniformity of electric field and charge density distributions between the contacts. This approach describes in a unified manner both linear and saturation parts of MOSFET’s I-V characteristics as for velocity saturation and for electrostatic pinch-off effect cases. It was shown also that the same design formula is appropriate for description of I-V characteristics in bipolar transistors.
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G. I. Zebrev, G. I. Zebrev, } "Unified description of I-V characteristics in field-effect and bipolar transistors based on current density continuity equation solution", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944011 (18 December 2014); doi: 10.1117/12.2180607; https://doi.org/10.1117/12.2180607
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