18 December 2014 A simplified analytical model of merged MOS
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944012 (2014) https://doi.org/10.1117/12.2179602
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
A two dimensional model of the merged MOSFET (MMOS), a new multigate device with ambipolar conductivity, is constructed and analyzed. Two variants of the MMOS (thin and thick channel) are considered. In the first case, the distribution of potential in the channel can be calculated, and dependency of electron and hole currents on the control voltages is expressed in exponential integral functions. In the second case transcendental equations must be solved to obtain the potential in the channel volume. Equations for determining currents in simplified conditions are derived. Examples of the input, output and transfer characteristics of the MMOS are given.
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V. Rakitin, V. Rakitin, A. Rakitin, A. Rakitin, } "A simplified analytical model of merged MOS", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944012 (18 December 2014); doi: 10.1117/12.2179602; https://doi.org/10.1117/12.2179602
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