18 December 2014 Monte Carlo simulation of hot electron transport in deep submicron SOI MOSFET
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 944013 (2014) https://doi.org/10.1117/12.2180417
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
Ensemble Monte-Carlo simulation of electron and hole transport in deep submicron n-channel SOI MOSFET with 100 nm channel length is performed. The influence of interband impact ionization process on the transistor characteristics is investigated within the framework of Keldysh impact ionization model. Effective threshold energy of electron impact ionization as a parameter characterizing the process is calculated. The dependence of the effective threshold energy on the drain bias is determined.
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A. V. Borzdov, A. V. Borzdov, V. M. Borzdov, V. M. Borzdov, V. V. V'yurkov, V. V. V'yurkov, } "Monte Carlo simulation of hot electron transport in deep submicron SOI MOSFET", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 944013 (18 December 2014); doi: 10.1117/12.2180417; https://doi.org/10.1117/12.2180417
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