18 December 2014 Modeling and simulation of dose effects in bipolar analog integrated circuits
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Proceedings Volume 9440, International Conference on Micro- and Nano-Electronics 2014; 94401C (2014) https://doi.org/10.1117/12.2180758
Event: The International Conference on Micro- and Nano-Electronics 2014, 2014, Zvenigorod, Russian Federation
Abstract
It is shown that observed non-monotonic behavior of dose degradation in bipolar devices can be explained within the non-linear set of kinetic equations for the oxide trapped charge and surface recombination centers. It has been shown that proposed earlier a physical model of the Enhanced Low Dose Rate Sensitivity (ELDRS) is fully consistent with experimental temperature dependence of charge yield in thick oxides for a range of low temperatures.
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G. I. Zebrev, G. I. Zebrev, M. G. Drosdetsky, M. G. Drosdetsky, A. M. Galimov, A. M. Galimov, A. A. Lebedev, A. A. Lebedev, I. A. Danilov, I. A. Danilov, V. O. Turin, V. O. Turin, } "Modeling and simulation of dose effects in bipolar analog integrated circuits ", Proc. SPIE 9440, International Conference on Micro- and Nano-Electronics 2014, 94401C (18 December 2014); doi: 10.1117/12.2180758; https://doi.org/10.1117/12.2180758
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