7 January 2015 Local topography of optoelectronic substrates prepared by dry plasma etching process
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Proceedings Volume 9442, Optics and Measurement Conference 2014; 944208 (2015) https://doi.org/10.1117/12.2176367
Event: Optics and Measurement Conference 2014, 2014, Liberec, Czech Republic
Abstract
In this work, the etch rate of silicon carbide and aluminum oxide were studied as a function of the angle etching material and flow of plasma. Al2O3 and SiC are important materials in the design of optical and electronic devices and the topography of the wafers has a large influence on the device quality. Argon was applied for the dry etching of Al2O3 and SiC wafers. The wafer slope for highest obtained etch is defined. Atomic force microscopy was used to good morphology control of etched wafers. Statistical and correlation analysis was applied to estimate the surface perfection. Interferometry allowed to control etching rate.
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Dinara Dallaeva, Shikhgasan Ramazanov, Elena Prokopyeva, Pavel Tománek, Lubomír Grmela, "Local topography of optoelectronic substrates prepared by dry plasma etching process", Proc. SPIE 9442, Optics and Measurement Conference 2014, 944208 (7 January 2015); doi: 10.1117/12.2176367; https://doi.org/10.1117/12.2176367
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