In this article, silicon was etched with the Bosch process and cryogenic processes for patterning high-aspect-ratio features. The two leading techniques were compared. The influences of process parameters on the aspect ratio, etching rate and sidewall roughness of silicon were studied. Strong dependence of etch rate on loading was observed. The result showed that the etching rate rely on the process parameters. The aspect ratio of 23 was obtained and is able to be further improved.
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Shun Zhou, Jiang Hu, Yufeng Zhu, Jing Nie, Jiaqiang Du, "Research on deep silicon etching for micro-channel plates," Proc. SPIE 9449, The International Conference on Photonics and Optical Engineering (icPOE 2014), 94493V (19 February 2015);