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16 August 1988 High Peak Power Low Threshold AlGaAs/GaAs Stripe Laser Diodes On Si Substrates By Hybrid MBE/MOCVD Growth
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Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947405
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States
Abstract
We report high peak power low threshold AlGaAs/GaAs double heterostructure stripe geometry laser diodes on Si substrates grown for the first time by hybrid migration-enhanced MBE (MEMBE) and MOCVD. The lasers with 6 pm silicon oxide stripes were tested unmounted under pulsed conditions (i.e., 50 ns pulse width and 10 KHz pulse repetition rate) at room temperature. These lasers show a peak output power as high as 184 mW per facet and a threshold current as low as 150 mA at 300 K for a cavity length of 350 μm. The differential quantum efficiency of 30 % was obtained without mirror facet coating. A threshold current density of 7 kA/cm2 was obtained based on the nominal stripe dimensions without considering current spreading and lateral diffusion; we estimate about 2 kA/cm2 when taking these effects into account. For comparison, the pulsed threshold current density of the broad area DH lasers on GaAs substrates was 1.1 kA/cm2 at room temperature. This would be further reduced for lasers with a quantum well (e.g., GRIN-SCH SQW) active region. These results show the highest output peak power reported so far with a low threshold current for conventional double heterostructure stripe laser diodes grown on Si substrates.
© (1988) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. H. Kim, A. Nouhi, G. Radhakrishnan, and J. Katz "High Peak Power Low Threshold AlGaAs/GaAs Stripe Laser Diodes On Si Substrates By Hybrid MBE/MOCVD Growth", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947405
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