Langmuir-Blodgett Deposited Gates For InP-InGaAs Field Effect Transistors

Winston K. Chan; Herbert M. Cox; Joseph H. Abeles; Stephen P. Kelty

doi:10.1117/12.947399

16 August 1988 Langmuir-Blodgett Deposited Gates For InP-InGaAs Field Effect Transistors

Winston K. Chan, Herbert M. Cox, Joseph H. Abeles, Stephen P. Kelty

Proceedings Volume 0945, Advanced Processing of Semiconductor Devices II; (1988) https://doi.org/10.1117/12.947399
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

We report on the novel application of Langmuir-Blodgett film deposition of cadmium di-stearate to form a high barrier height Schottky barrier on n-In0.53Ga0.47As. The method is simple and can be applied to integrated optoelectronics where conflicting device requirements impose astringent constraints on the material and processing technology. Using this technique to form the gate electrode, we fabricated a 1μm gate length inverted InP-InGaAs modulation doped field effect transistor (MODFET) with an extrinsic transconductance of 170 mS/mm and a current gain cut-off frequency fT of 19 GHz.

Citation Download Citation

Winston K. Chan, Herbert M. Cox, Joseph H. Abeles, and Stephen P. Kelty "Langmuir-Blodgett Deposited Gates For InP-InGaAs Field Effect Transistors", Proc. SPIE 0945, Advanced Processing of Semiconductor Devices II, (16 August 1988); https://doi.org/10.1117/12.947399

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