6 January 2015 Defect formation energy for charge states and electrophysical properties of CdMnTe
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Proceedings Volume 9450, Photonics, Devices, and Systems VI; 94500Q (2015) https://doi.org/10.1117/12.2073343
Event: Photonics Prague 2014, 2014, Prague, Czech Republic
Abstract
In this work the results of investigation of Cd1-xMnxTe (x=0.01, 0.03, 0.05) solid solutions synthesis and their thin films' obtaining technology have been represented. Epitaxial films of monocrystalline Cd1-хMnхTe semimagnetic semiconductors were obtained on mica substrate by MBC method. Lattice parameters and crystal structure of samples were defined with X-ray diffraction method. It has been studied the electrophysical parameters. Defect formation energy has been calculated for Cd1-хMnхTe semimagnetic semiconductors by Ab-initio method using Atomistix Toolkit program. We have studied the dependence of defect formation energy on supercell size for charged vacancy and interstitial defects in Cd1-хMnхTe thin films.
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M. A. Mehrabova, H. R. Nuriyev, H. S. Orujov, A. M. Nazarov, R. M. Sadigov, V. N. Poladova, "Defect formation energy for charge states and electrophysical properties of CdMnTe ", Proc. SPIE 9450, Photonics, Devices, and Systems VI, 94500Q (6 January 2015); doi: 10.1117/12.2073343; https://doi.org/10.1117/12.2073343
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