6 January 2015 Defect formation energy for charge states and electrophysical properties of CdMnTe
Author Affiliations +
Proceedings Volume 9450, Photonics, Devices, and Systems VI; 94500Q (2015) https://doi.org/10.1117/12.2073343
Event: Photonics Prague 2014, 2014, Prague, Czech Republic
In this work the results of investigation of Cd1-xMnxTe (x=0.01, 0.03, 0.05) solid solutions synthesis and their thin films' obtaining technology have been represented. Epitaxial films of monocrystalline Cd1-хMnхTe semimagnetic semiconductors were obtained on mica substrate by MBC method. Lattice parameters and crystal structure of samples were defined with X-ray diffraction method. It has been studied the electrophysical parameters. Defect formation energy has been calculated for Cd1-хMnхTe semimagnetic semiconductors by Ab-initio method using Atomistix Toolkit program. We have studied the dependence of defect formation energy on supercell size for charged vacancy and interstitial defects in Cd1-хMnхTe thin films.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. A. Mehrabova, M. A. Mehrabova, H. R. Nuriyev, H. R. Nuriyev, H. S. Orujov, H. S. Orujov, A. M. Nazarov, A. M. Nazarov, R. M. Sadigov, R. M. Sadigov, V. N. Poladova, V. N. Poladova, } "Defect formation energy for charge states and electrophysical properties of CdMnTe ", Proc. SPIE 9450, Photonics, Devices, and Systems VI, 94500Q (6 January 2015); doi: 10.1117/12.2073343; https://doi.org/10.1117/12.2073343


Back to Top