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6 January 2015 High-temperature luminescence in light-emitting heterostructures with a high potential barriers based on GaSb
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Proceedings Volume 9450, Photonics, Devices, and Systems VI; 94501Q (2015)
Event: Photonics Prague 2014, 2014, Prague, Czech Republic
The electroluminescent properties of an n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with a high potential barrier in the conduction band (large conduction-band offset) at the n-GaSb/n-InGaAsSb type-II heterointerface (ΔEc = 0.79 eV) are studied. Two bands with peaks at 0.28 and 0.64 eV at 300 K, associated with radiative recombination in n-InGaAsSb and n-GaSb, respectively, are observed in the electroluminescence spectrum. In the entire temperature range under study, T = 290 – 480 K, additional electron-hole pairs are formed in the n-InGaAsSb active region by impact ionization with hot electrons heated on the large the conduction-band offset. These pairs contribute to radiative recombination, which leads to a nonlinear increase in the electroluminescence intensity and output optical power with increasing pump current. A superlinear increase in the emission power of the long-wavelength band is observed upon heating in the temperature range T = 290 – 345 K, and a linear increase is observed at T < 345 K. Theoretical calculations have shown that this behavior of the temperature dependence of the optical power caused by competition between the radiative recombination, thermionic emission and Auger recombination.
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A. Petukhov, L. Danilov, E. Ivanov, K. Kalinina, M. Mikhailova, G. Zegrya, N. Stoyanov, and Yu. Yakovlev "High-temperature luminescence in light-emitting heterostructures with a high potential barriers based on GaSb", Proc. SPIE 9450, Photonics, Devices, and Systems VI, 94501Q (6 January 2015);

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