26 May 2015 IR CMOS: the digital nightvision solution to sub-1 mLux imaging
Author Affiliations +
Abstract
SiOnyx has demonstrated imaging at light levels below 1 mLux at 60 FPS with a 720P CMOS image sensor in a compact, low latency camera. The camera contains a 1 inch (16 mm) optical format sensor and streams uncompressed video over CameraLink with row wise image latency below 1 msec. Sub mLux imaging is enabled by the combination of enhanced quantum efficiency in the near infrared together with state of the art low noise image sensor design. The quantum efficiency enhancement is achieved by utilizing SiOnyx’s proprietary ultrafast laser semiconductor processing technology that enhances the absorption of light within a thin pixel layer. Our technology demonstrates a 10 fold improvement in infrared sensitivity over incumbent imaging technology while maintaining complete compatibility with standard CMOS image sensor process flows. Applications include surveillance, nightvision, and 1064nm laser see-spot.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. U. Pralle, J. E. Carey, C. Vineis, C. Palsule, J. Jiang, T. Joy, "IR CMOS: the digital nightvision solution to sub-1 mLux imaging", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945108 (26 May 2015); doi: 10.1117/12.2177006; https://doi.org/10.1117/12.2177006
PROCEEDINGS
6 PAGES


SHARE
RELATED CONTENT

IR CMOS: infrared enhanced silicon imaging
Proceedings of SPIE (June 11 2013)
Focal plane technologies for LSST
Proceedings of SPIE (December 24 2002)
Testing of CMOS devices in NIF's harsh neutron environment
Proceedings of SPIE (October 15 2012)
Characterization and system modeling of a 5-Mpixel CMOS array
Proceedings of SPIE (February 21 2007)
Solid state image sensor: technologies and applications
Proceedings of SPIE (June 18 1998)

Back to Top