Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

Zhi-Yuan Lin; Jin Fan; Shi Liu; Yong-Hang Zhang

doi:10.1117/12.2177526

4 June 2015 Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices

Zhi-Yuan Lin, Jin Fan, Shi Liu, Yong-Hang Zhang

Author Affiliations +

Proceedings Volume 9451, Infrared Technology and Applications XLI; 94510Q (2015) https://doi.org/10.1117/12.2177526
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

This paper reports a study of Shockley-Read-Hall, radiative, and Auger recombination processes in a series of molecular beam epitaxy grown InAs/InAsSb mid-wavelength infrared and long-wavelength infrared type-II superlattice samples using temperature- and excitation -density-dependent photoluminescence measurements, which are carried out from 12 to 77 K with excitation densities from 5 mW/cm² to 20 W/cm². A theoretical model is applied to describe the relation between integrated photoluminescence intensity and excitation density. Shockley-Read-Hall, radiative, and Auger recombination coefficients are extracted by fitting this relation. The results show that the Shockley-Read-Hall recombination lifetimes in all InAs/InAsSb type-II superlattice samples are longer than 100 ns, specifically the lifetime in a long-wavelength infrared sample reaches 358 ns at 77 K, in good agreement with the previously reported result of 412 ns measured using time-resolved photoluminescence on a similar sample.

Citation Download Citation

Zhi-Yuan Lin, Jin Fan, Shi Liu, and Yong-Hang Zhang "Photoluminescence study of carrier recombination processes in InAs/InAsSb type-II superlattices", Proc. SPIE 9451, Infrared Technology and Applications XLI, 94510Q (4 June 2015); https://doi.org/10.1117/12.2177526

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