4 June 2015 Cryogenic measurements of a digital pixel readout integrated circuit for LWIR
Author Affiliations +
This paper presents and discusses the cryogenic temperature (77K) measurement results of a digital readout integrated circuit (DROIC) for a 32x32 long wavelength infrared pixel sensor array designed in 90nm CMOS process. The chip achieves a signal-to-noise ratio (SNR) of 58dB with a charge handling capacity of 2.03Ge- at cryogenic temperature with 1.3mW of power dissipation. The performance of the readout is discussed in terms of power dissipation, charge handling capacity and SNR considering the fact that the process library models are not optimized for cryogenic temperature operation of the Metal-Oxide-Semiconductor (MOS) devices. These results provide an insight to foresee the design confrontations due to non-optimized device models for cryogenic temperatures particularly for short channel devices
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Atia Shafique, Atia Shafique, Melik Yazici, Melik Yazici, Huseyin Kayahan, Huseyin Kayahan, Omer Ceylan, Omer Ceylan, Yasar Gurbuz, Yasar Gurbuz, "Cryogenic measurements of a digital pixel readout integrated circuit for LWIR", Proc. SPIE 9451, Infrared Technology and Applications XLI, 94510X (4 June 2015); doi: 10.1117/12.2177550; https://doi.org/10.1117/12.2177550

Back to Top