4 June 2015 Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors
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Numerical analysis of a CdS/PbSe room-temperature heterojunction photovoltaic detector is discussed as to provide guidelines for practical improvement, based on the previous experimental exploration [1]. In our experiment work, the polycrystalline CdS film was prepared in hydro-chemical method on top of the single crystalline PbSe grown by molecular beam epitaxy method. The preliminary results demonstrated a 5.48×108 Jones peak detectivity at λ=4.7μm under zero-bias. However, the influence of some material and device parameters such as carrier concentration, interface recombination velocity remains uncertain. These parameters affect the built-in electric field and the carriers’ transportation properties, and consequently could have detrimental effect on the device performance of the CdS/PbSe detector. In this work, therefore, the numerical analysis is performed based on these parameters. The simulation results suggest that the device performance can be improved at least 4 times by increasing CdS concentration for two orders of magnitudes, and the device performance will degrade severely if the interface recombination speed is over 104 cm/s.
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Binbin Weng, Binbin Weng, Jijun Qiu, Jijun Qiu, Wanyin Ge, Wanyin Ge, Zhisheng Shi, Zhisheng Shi, "Numerical analysis of CdS/PbSe room temperature mid-infrared heterojunction photovoltaic detectors", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945116 (4 June 2015); doi: 10.1117/12.2175813; https://doi.org/10.1117/12.2175813

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