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4 June 2015 MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation
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Abstract
The work reports on mid-wavelength infrared HgCdTe barrier detectors with a zero valence band offset, grown by metal organic chemical vapour deposition on GaAs substrates. The experiments indicate the influence of the barrier on electrical and optical performances of the p+BnN+ device. The devices exhibit very low dark current densities in the range of (2÷3)×10–3 A/cm2 at 300 K and a high current responsivity of about 2A/W in the wide range of reverse bias voltage. The estimated thermal activation energy of about 0.33 eV is close to the full Hg0.64Cd0.36Te bandgap, what indicates diffusion limited dark currents.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Kopytko, A. Kębłowski, W. Gawron, P. Martyniuk, P. Madejczyk, K. Jóźwikowski, O. Markowska, and A. Rogalski "MOCVD grown HgCdTe p+BnN+ barrier detector for MWIR HOT operation", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945117 (4 June 2015); https://doi.org/10.1117/12.2192152
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