4 June 2015 MCT by MBE on GaAs at AIM: state of the art and roadmap
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In multiple publications over the last years, MCT MBE on GaAs has been shown to be a very versatile and promising material system and indeed may be the prime candidate among the alternative substrates for the fabrication of high-performance detectors across the whole IR composition range. In this paper we report on successful growth of MCT on GaAs over the composition range 0.2 < x(Cd) < 0.8. A single color MWIR 640 × 512, 15 μm pitch detector fabricated from this material with an operability of 99.71% at an operating temperature of 120 K is presented. In the LWIR region, an operability of 99.48% at 65 K has been achieved with a 1280 × 1024, 15 μm pitch detector. Finally we report on preliminary results of a dual-color 640 × 512, 20 μm pitch detector with cutoff wavelengths in the 3 - 4 and 4 - 5 μm range.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Heinrich Figgemeier, Heinrich Figgemeier, Jan Wenisch, Jan Wenisch, Detlef Eich, Detlef Eich, Stefan Hanna, Stefan Hanna, Wilhelm Schirmacher, Wilhelm Schirmacher, Holger Lutz, Holger Lutz, Timo Schallenberg, Timo Schallenberg, Rainer Breiter, Rainer Breiter, "MCT by MBE on GaAs at AIM: state of the art and roadmap", Proc. SPIE 9451, Infrared Technology and Applications XLI, 945127 (4 June 2015); doi: 10.1117/12.2178478; https://doi.org/10.1117/12.2178478


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