Thermal stability of atomic layer deposition Al2O3 film on HgCdTe

P. Zhang; C. H. Sun; Y. Zhang; X. Chen; K. He; Y. Y. Chen; Z. H. Ye

doi:10.1117/12.2180414

22 June 2015 Thermal stability of atomic layer deposition Al₂O₃ film on HgCdTe

P. Zhang, C. H. Sun, Y. Zhang, X. Chen, K. He, Y. Y. Chen, Z. H. Ye

Proceedings Volume 9451, Infrared Technology and Applications XLI; 94512A (2015) https://doi.org/10.1117/12.2180414
Event: SPIE Defense + Security, 2015, Baltimore, MD, United States

Abstract

Thermal stability of Atomic Layer Deposition Al₂O₃ film on HgCdTe was investigated by Al₂O₃ film post-deposition annealing treatment and Metal-Insulator-Semiconductor device low-temperature baking treatment. The effectiveness of Al₂O₃ film was evaluated by measuring the minority carrier lifetime and capacitance versus voltage characteristics. After annealing treatment, the minority carrier lifetime of the HgCdTe sample presented a slight decrease. Furthermore, the fixed charge density and the slow charge density decreased significantly in the annealed MIS device. After baking treatment, the fixed charge density and the slow charge density of the unannealed and annealed MIS devices decreased and increased, respectively.

Citation Download Citation

P. Zhang, C. H. Sun, Y. Zhang, X. Chen, K. He, Y. Y. Chen, and Z. H. Ye "Thermal stability of atomic layer deposition Al₂O₃ film on HgCdTe", Proc. SPIE 9451, Infrared Technology and Applications XLI, 94512A (22 June 2015); https://doi.org/10.1117/12.2180414

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