Effective Bandgap Shrinkage Measurement In Silicon Solar Cell By Electro-Reflectance Method

Tapan K. Gupta

doi:10.1117/12.947415

9 August 1988 Effective Bandgap Shrinkage Measurement In Silicon Solar Cell By Electro-Reflectance Method

Tapan K. Gupta

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947415
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Effective bandgap shrinkage due to the presence of a thin p+ diffused region on a unif-ormly doped n-type silicon constituting a p+n junction solar cell is measured by electro-lyte electro-reflectance spectroscopic method and reported here. Results show two prominent features in two bands (a) in the vicinity of indirect gap around 1.2 eV and (b) in the region above 3.2 eV. The peaks were found to shift with doping density in the p⁺ region. The observed shift was ~22 eV between two samples of doping densities 10¹⁸ and 10²⁰ cm^-3 in the p+ region.

Citation Download Citation

Tapan K. Gupta "Effective Bandgap Shrinkage Measurement In Silicon Solar Cell By Electro-Reflectance Method", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947415

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