Photoluminescence Studies Of InGaAlAs Quaternary Alloys

Eric D. Jones; L.Ralph Dawson

doi:10.1117/12.947428

9 August 1988 Photoluminescence Studies Of InGaAlAs Quaternary Alloys

Eric D. Jones, L.Ralph Dawson

Proceedings Volume 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III; (1988) https://doi.org/10.1117/12.947428
Event: Advances in Semiconductors and Superconductors: Physics and Device Applications, 1988, Newport Beach, CA, United States

Abstract

Photoluminescence data are used to obtain the concentration and temperature dependence of the bandgap energies of epitaxial layers of quaternary alloy In Ga Al As for Al concentrations less than 0.6. The samples were grown by MBE without an intervening buffer layer. For an In concentration of 0.1, the transition from a direct to an indirect bandgap material occurs at Al concentration of about 0.5. Coefficients of the temperature dependence of the bandgap energy are also presented.

Citation Download Citation

Eric D. Jones and L.Ralph Dawson "Photoluminescence Studies Of InGaAlAs Quaternary Alloys", Proc. SPIE 0946, Spectroscopic Characterization Techniques for Semiconductor Technology III, (9 August 1988); https://doi.org/10.1117/12.947428

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