20 May 2015 AlGaInN laser diode technology and systems for defence and security applications
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Abstract
The latest developments in AlGaInN laser diode technology are reviewed for defence and security applications such as underwater communications. The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from u.v., ~380nm, to the visible ~530nm, by tuning the indium content of the laser GaInN quantum well. Thus AlGaInN laser diode technology is a key enabler for the development of new disruptive system level applications in displays, telecom, defence and other industries.
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Stephen P. Najda, Piotr Perlin, Tadek Suski, Lucja Marona, Mike Boćkowski, Mike Leszczyński, Przemek Wisniewski, Robert Czernecki, Robert Kucharski, Grzegorz Targowski, Scott Watson, Antony E. Kelly, "AlGaInN laser diode technology and systems for defence and security applications", Proc. SPIE 9466, Laser Technology for Defense and Security XI, 946604 (20 May 2015); doi: 10.1117/12.2178463; https://doi.org/10.1117/12.2178463
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