22 May 2015 Flexible phosphorene devices and circuits
Author Affiliations +
Proceedings Volume 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII; 94670A (2015); doi: 10.1117/12.2177563
Event: SPIE Defense + Security, 2015, Baltimore, Maryland, United States
Two-dimensional (2D) semiconductors with high carrier mobilities and sizeable bandgap are desirable for future high-speed and low power mechanically flexible nanoelectronics. In this work, we report encapsulated bottom-gated black phosphorus (BP) field-effect transistors (FETs) on flexible polyimide affording maximum carrier mobility of about 310cm2/V∙s and current on/off ratio exceeding 103. Essential circuits of flexible electronic systems enabled by the device ambipolar functionality, high-mobility and current saturation are demonstrated in this work, including digital inverter, frequency doubler, and analog amplifiers featuring a voltage gain of ~8.7, which is the state-of-the-art value for flexible 2D semiconductor based amplifiers. In addition, we demonstrate the single FET based flexible BP amplitude-modulated (AM) demodulator, an active stage in radio receivers.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Weinan Zhu, Maruthi N. Yogeesh, Deji Akinwande, "Flexible phosphorene devices and circuits", Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94670A (22 May 2015); doi: 10.1117/12.2177563; http://dx.doi.org/10.1117/12.2177563




Amplitude modulation

Analog electronics

Field effect transistors

Flexible circuits


CCD and IR array controllers
Proceedings of SPIE (August 16 2000)
Laser superposition in multi-pass amplification process
Proceedings of SPIE (February 03 2015)
Micromachined silicon x-ray optics
Proceedings of SPIE (November 11 1994)
Nature Of Defects And Defect Generation In Optical Crystals
Proceedings of SPIE (December 12 1985)

Back to Top