22 May 2015 Flexible phosphorene devices and circuits
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Proceedings Volume 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII; 94670A (2015); doi: 10.1117/12.2177563
Event: SPIE Defense + Security, 2015, Baltimore, Maryland, United States
Abstract
Two-dimensional (2D) semiconductors with high carrier mobilities and sizeable bandgap are desirable for future high-speed and low power mechanically flexible nanoelectronics. In this work, we report encapsulated bottom-gated black phosphorus (BP) field-effect transistors (FETs) on flexible polyimide affording maximum carrier mobility of about 310cm2/V∙s and current on/off ratio exceeding 103. Essential circuits of flexible electronic systems enabled by the device ambipolar functionality, high-mobility and current saturation are demonstrated in this work, including digital inverter, frequency doubler, and analog amplifiers featuring a voltage gain of ~8.7, which is the state-of-the-art value for flexible 2D semiconductor based amplifiers. In addition, we demonstrate the single FET based flexible BP amplitude-modulated (AM) demodulator, an active stage in radio receivers.
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Weinan Zhu, Maruthi N. Yogeesh, Deji Akinwande, "Flexible phosphorene devices and circuits", Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94670A (22 May 2015); doi: 10.1117/12.2177563; http://dx.doi.org/10.1117/12.2177563
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KEYWORDS
Transistors

Amplifiers

Semiconductors

Amplitude modulation

Analog electronics

Field effect transistors

Flexible circuits

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