22 May 2015 Lowering contact resistance of graphene FETs with capacitive extension of ohmic contacts for enhanced RF performance
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Abstract
In this work, we propose a novel Graphene field effect transistor (GFET) with ohmic Source/Drain contacts having capacitive extension towards the Gate. The ohmic contacts of the proposed GFET are used for DC biasing as like as conventional GFETs whereas their extended parts which are capacitively coupled to the channel reduce access region length as well as the access resistance and provide a low impedance route for the high frequency RF signal. Reduction of access resistance along with the paralleling of ohmic contact resistance and real part of capacitive impedance result in an overall lower Source/Drain resistance which eventually increases the current gain cut-off frequency, fT. We have studied and compared the DC and RF characteristics of the baseline conventional GFET and proposed GFET using analytical and numerical techniques.
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Chowdhury Al-Amin, Mustafa Karabiyik, Raju Sinha, Nezih Pala, "Lowering contact resistance of graphene FETs with capacitive extension of ohmic contacts for enhanced RF performance", Proc. SPIE 9467, Micro- and Nanotechnology Sensors, Systems, and Applications VII, 94672U (22 May 2015); doi: 10.1117/12.2176568; https://doi.org/10.1117/12.2176568
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