UV/VIS/NIR imaging technologies: challenges and opportunities

Rihito Kuroda; Shigetoshi Sugawa

doi:10.1117/12.2180060

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13 May 2015 UV/VIS/NIR imaging technologies: challenges and opportunities

Rihito Kuroda, Shigetoshi Sugawa

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Proceedings Volume 9481, Image Sensing Technologies: Materials, Devices, Systems, and Applications II; 948108 (2015) https://doi.org/10.1117/12.2180060
Event: SPIE Sensing Technology + Applications, 2015, Baltimore, Maryland, United States

Abstract

Challenges and opportunities of ultraviolet (UV), visible (VIS) and near-infrared (NIR) light imaging technologies are overviewed in this paper. For light detectors and image sensors for UV/VIS/NIR imaging, it is required that they have high sensitivity for wide spectral light waveband or targeted narrow waveband as well as the high stability of light sensitivity toward UV light based on cost effective technology. Wide spectral response, high sensitivity and high stability advanced Si photodiode (PD) pn junction formation technology based on the flattened Si surface and high transmittance on-chip optical filter formation technology were developed. A linear photodiode array (PDA), wide dynamic range and ultrahigh speed CMOS image sensors employing the developed technology were fabricated and their advanced performances are described in this paper.

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Rihito Kuroda and Shigetoshi Sugawa "UV/VIS/NIR imaging technologies: challenges and opportunities", Proc. SPIE 9481, Image Sensing Technologies: Materials, Devices, Systems, and Applications II, 948108 (13 May 2015); https://doi.org/10.1117/12.2180060

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