13 May 2015 Effect of high energy proton implantation on the device characteristics of InAlGaAs-capped InGaAs/GaAs quantum dot based infrared photodetectors
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Abstract
Self-assembled In(Ga)As/GaAs quantum dot infrared photodetectors (QDIPs) have promising applications in the midwavelength infrared and long-wavelength infrared regions for various defense and space application purposes. It has been demonstrated that the performance of QDIPs has improved significantly by using architectures such as dots-in-awell, different combinational capping or post growth treatment with high energy hydrogen ions. In this work, we enhanced the electrical properties InGaAs/GaAs using high energy proton implantation. Irradiation with proton resulted suppression in field assisted tunnelling of dark current by three orders for implanted devices. Photoluminescence (PL) enhancement was observed up to certain dose of protons due to eradication of as-grown defects and non radiative recombination centers. In addition, peak detectivity (D*) increased up to two orders of magnitude from 6.1 x108 to 1.0 × 1010 cm-Hz1/2/W for all implanted devices.
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S. Upadhyay, S. Upadhyay, A. Mandal, A. Mandal, H. Ghadi, H. Ghadi, D. Pal, D. Pal, N. B. V. Subrahmanyam, N. B. V. Subrahmanyam, P. Singh, P. Singh, S. Chakrabarti, S. Chakrabarti, } "Effect of high energy proton implantation on the device characteristics of InAlGaAs-capped InGaAs/GaAs quantum dot based infrared photodetectors", Proc. SPIE 9481, Image Sensing Technologies: Materials, Devices, Systems, and Applications II, 94810T (13 May 2015); doi: 10.1117/12.2181564; https://doi.org/10.1117/12.2181564
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