Determination of stress in silicon wafers using Raman spectroscopy

M. De Biasio; L. Neumaier; N. Vollert; E. Geier; M. Roesner; Ch. Hirschl; M. Kraft

doi:10.1117/12.2176994

3 June 2015 Determination of stress in silicon wafers using Raman spectroscopy

M. De Biasio, L. Neumaier, N. Vollert, E. Geier, M. Roesner, Ch. Hirschl, M. Kraft

Author Affiliations +

Proceedings Volume 9482, Next-Generation Spectroscopic Technologies VIII; 94820R (2015) https://doi.org/10.1117/12.2176994
Event: SPIE Sensing Technology + Applications, 2015, Baltimore, MD, United States

Abstract

With a strong industrial trend towards using thin silicon in semiconductor devices, process legacy-induced stresses are matter of increasing practical importance. A key problem here is a lack of suitable metrology equipment for measuring inherent substrate material stresses in the manufacturing line. To overcome this, the use of Raman microspectrometry as a tool for measuring stress levels and distributions quantitatively on entire productive wafers was researched. Combining model cases, theoretical considerations and real-world samples, it could be shown that Raman can provide the necessary analytical accuracy and reliability, allowing to relate ensuing stress states e.g. to different wafer thinning process parameters.

Citation Download Citation

M. De Biasio, L. Neumaier, N. Vollert, E. Geier, M. Roesner, Ch. Hirschl, and M. Kraft "Determination of stress in silicon wafers using Raman spectroscopy", Proc. SPIE 9482, Next-Generation Spectroscopic Technologies VIII, 94820R (3 June 2015); https://doi.org/10.1117/12.2176994

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