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13 May 2015 Broadband terahertz-wave detector implementing zero-biased InGaAsP Schottky-barrier diode
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Abstract
This paper describes two types of terahertz-wave detector modules implementing a zero-biased InGaAsP Schottky barrier diode (SBD). A SBD was monolithically integrated with a short-stub resonant matching circuit for increasing the detection sensitivity, and assembled in a compact J-band (WR-3) rectangular-waveguide-input module. The module could detect signals at frequencies from 200 to 500 GHz, and its sensitivity peaked at 1460 V/W around 350 GHz, which is a record value for the InP-based zero-biased SBD. A polarization-sensitive sub-terahertz-wave detector was also developed by integrating a SBD and an extended bowtie antenna. The fabricated quasi-optical module could detect signals at frequencies ranging from 30 GHz to 1 THz at zero bias. The principal-polarization-axis angle for signal detection was stable within ±1.5° at frequencies from 80 to 600 GHz, while the degree of polarization was more than 95%.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hiroshi Ito "Broadband terahertz-wave detector implementing zero-biased InGaAsP Schottky-barrier diode", Proc. SPIE 9483, Terahertz Physics, Devices, and Systems IX: Advanced Applications in Industry and Defense, 948307 (13 May 2015); https://doi.org/10.1117/12.2182741
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