The objective of this study is to achieve a high sensitive infrared detector by fabricating highly ordered array of indium-antimony (In-Sb) nanowires which is a semiconductor material. The approach is to investigate an infrared detector with arrayed nanowires which can transport signals in one dimension to obtain high efficiency and sensitivity compared with In-Sb by using traditional thin film fabrications. This research expects to provide an infrared detector by fabricating III-V alloy nanowires to highly improve the resolution of infrared signal. To develop scaled-up functional devices, highly ordered nanowire arrays are essential building blocks. Many candidate materials (metals, alloys, oxides and semiconductors) have been studied for various potential applications in nanotechnology and have shown some promising results. The solid metallic nanowires have been exploited for a wide range of applications to take the advantages of their large length/diameter aspect ratio. Further development to synthesize nanowires efficiently at lower cost is the direction for manufacturing next generation nanodevices. In this study, various diameters of ordering nanowires, from 10 nm to 500 nm, were fabricated and evaluated the performance of the sensitivity of infrared detection. Moreover, a 1 inch plate, which can be regarded as a device, with nanowires array was fabricated by designing a new type of processing chamber.