13 May 2015 Growth and morphology of lead tin selenide for MWIR detectors
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Abstract
A great deal of research has been performed on developing room temperature mid wave infrared (MWIR) and long wave infrared (LWIR) detectors to replace very costly mercury cadmium telluride based detectors. Among the more studied materials for high operating temperature detectors, PbSe and PbSe-type heavy metal selenides have been grown in the bulk, thin film and nano crystal morphologies. To better understand the effects of the substrate on the properties of these thin films, we have deposited lead selenide by physical vapor transport (PVT) method on highresistivity Si substrates and studied the characteristics of the film. Growth on silicon and glass substrates showed different morphologies compared to pure lead selenide material. It was seen that materials grown on a glass substrate possessed different morphology after annealing. FTIR was used to calculate bandgap information comparison with undoped PbSe. We will describe the details of the growth method, effect of substrate on nucleation and morphology of the pure and lead selenide material and band gap comparisons between substrates.
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Christopher Cooper, Christopher Cooper, Pietro Strobbia, Pietro Strobbia, Emily Schultheis, Emily Schultheis, Narasimha Prasad, Narasimha Prasad, Bradley Arnold, Bradley Arnold, Fow-Sen Choa, Fow-Sen Choa, Narsingh B. Singh, Narsingh B. Singh, } "Growth and morphology of lead tin selenide for MWIR detectors", Proc. SPIE 9491, Sensors for Extreme Harsh Environments II, 949104 (13 May 2015); doi: 10.1117/12.2179724; https://doi.org/10.1117/12.2179724
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