18 May 2015 Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers
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Abstract
Ways to improve beam divergence and energy consumption of quantum dot lasers emitting via the ground-state optical transitions by optimization of the key parameters of laser active region are discussed. It is shown that there exist an optimal cavity length, dispersion of inhomogeneous broadening and number of QD layers in active region allowing to obtain lasing spectrum of a given width at minimum injection current. The planar dielectric waveguide of the laser is optimized by analytical means for a better trade-off between high Γ-factor and low beam divergence.
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Vladimir V. Korenev, Vladimir V. Korenev, Artem V. Savelyev, Artem V. Savelyev, Alexey E. Zhukov, Alexey E. Zhukov, Mikhail V. Maximov, Mikhail V. Maximov, Alexander V. Omelchenko, Alexander V. Omelchenko, } "Waveguide and active region structure optimization for low-divergence InAs/InGaAs quantum dot comb lasers", Proc. SPIE 9503, Nonlinear Optics and Applications IX, 950305 (18 May 2015); doi: 10.1117/12.2178681; https://doi.org/10.1117/12.2178681
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