12 May 2015 Wavelength-tunable erbium-doped fiber laser using silicon-on-insulator (SOI) based micro-ring with narrow laser linewidth
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Abstract
We propose and demonstrate a wavelength-tunable and narrow-linewidth erbium-doped fiber (EDF) laser using siliconon- insulator (SOI) based micro-ring. We discuss the wavelength selection and wavelength-tunable operation of the proposed fiber laser. The SOI based micro-ring is fabricated on a SOI wafer with a 0.22 um thick top silicon layer and a 2 um thick burial oxide (BOX) layer. In order to enhance the coupling efficiency between the SOI based micro-ring and the EDF, a pair of uniform period grating couplers are used. In the experiment, the lasing wavelengths can be tuned in the wavelengths range from 1532 nm to 1567.2 nm with a tuning step of 2 nm. The wavelength range and the tuning step are determined by the EDFA gain-bandwidth and the FSR of the SOI based micro-ring respectively. The OSNR of each lasing wavelength is > 42 dB. By using a double-ring configuration, a narrow laser linewidth of 50 kHz can be achieved.
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L. G. Yang, C. W. Chow, C. H. Yeh, H. K. Tsang, "Wavelength-tunable erbium-doped fiber laser using silicon-on-insulator (SOI) based micro-ring with narrow laser linewidth", Proc. SPIE 9513, High-Power, High-Energy, and High-Intensity Laser Technology II, 95130Z (12 May 2015); doi: 10.1117/12.2177972; https://doi.org/10.1117/12.2177972
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