1 May 2015 Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing
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Abstract
A 775 nm femto-second laser annealed approach for the inter-pixel isolation, without mesa etching, to reduce dark currents of type-II InAs/GaSb superlattice photodiodes is presented. A greater than two fold improvement of the pixel isolation and a corresponding reduction in the dark current are observed for laser annealed superlattice photodiodes with a 5.5 μm cutoff wavelength, operating at 10K. A higher band gap barrier material from the superlattice structure in the inter-pixel region is expected to form after femto-second laser annealing, which has been explained on the basis of a superlattice inter-diffusion model. The increase in inter-pixel barrier height at 10K is estimated to be ~ 4 meV in the laser annealed superlattice photodiodes.
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Sona Das, Sona Das, Utpal Das, Utpal Das, Nutan Gautam, Nutan Gautam, Sanjay Krishna, Sanjay Krishna, } "Pixel isolation in Type-II InAs/GaSb superlattice photodiodes by femto-second laser annealing", Proc. SPIE 9516, Integrated Optics: Physics and Simulations II, 95160W (1 May 2015); doi: 10.1117/12.2178995; https://doi.org/10.1117/12.2178995
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