21 May 2015 Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications
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Abstract
Shunt capacitive radio-frequency microelectromechanical (RF MEMS) switches were modelled, fabricated and characterized in the K-band domain. Design allowed to predict the RF behaviour of the switches as a function of the bridge geometric parameters. The modelled switches were fabricated on silicon substrate, using a surface micromachining approach. In addition to the geometric parameters, the material structure in the bridge-actuator area was modified for switches fabricated on the same wafer, thanks to the removal/addition of two technological steps of crucial importance for RF MEMS switches performance, which are the use of the sacrificial layer and the deposition of a floating metal layer on the actuator. Surface profilometry analysis was used to check the material layer structure in the different regions of the bridge area as well as to investigate the mechanical behaviour of the moveable bridge under the application of a loaded force. The RF behaviour of all the fabricated switches was measured, observing the impact on the isolation of the manipulation of the bridge size and of the variations in the fabrication process.
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Fabio Quaranta, Fabio Quaranta, Anna Persano, Anna Persano, Giovanni Capoccia, Giovanni Capoccia, Antonietta Taurino, Antonietta Taurino, Adriano Cola, Adriano Cola, Pietro Siciliano, Pietro Siciliano, Andrea Lucibello, Andrea Lucibello, Romolo Marcelli, Romolo Marcelli, Emanuela Proietti, Emanuela Proietti, Alvise Bagolini, Alvise Bagolini, Benno Margesin, Benno Margesin, Pierluigi Bellutti, Pierluigi Bellutti, Jacopo Iannacci, Jacopo Iannacci, } "Tailoring design and fabrication of capacitive RF MEMS switches for K-band applications", Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 95170S (21 May 2015); doi: 10.1117/12.2179867; https://doi.org/10.1117/12.2179867
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