21 May 2015 Characterization of a dispersion-controlled approach to surface profilometry on wafers using a white-light interferometer
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Abstract
In this paper an alternative approach to surface profilometry based on a combined time-spectral domain white-light interferometer is shown. Within the setup a reference interferometer arm contains of a fixed mirror and a material with known dispersion while the object arm is aligned to a sample e.g. a wafer surface. Under the usage of a translation stage different height profiles in the nm - regime are emulated and measured accordingly with the interferometer. The signal analysis and calculation of interesting parameters is performed by a fitting algorithm. This algorithm is based on theoretical considerations on a dispersion affected interferometer which are also shown in the work. The experimental configuration allows a measurement range of 12 μm while a theoretical average resolution of 28 nm is possible. In the results it is observable that the measurement of height changes on a surface with an RMS error of 18 nm at the maximum is possible. In conclusion sources of error and further improvement possibilities are discussed.
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Ch. Taudt, Ch. Taudt, A. Augenstein, A. Augenstein, T. Baselt, T. Baselt, H. Assmann, H. Assmann, A. Greiner, A. Greiner, E. Koch, E. Koch, P. Hartmann, P. Hartmann, } "Characterization of a dispersion-controlled approach to surface profilometry on wafers using a white-light interferometer", Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 95170W (21 May 2015); doi: 10.1117/12.2179022; https://doi.org/10.1117/12.2179022
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