21 May 2015 The effect of sensor temperature and MOx layer thickness on the sensitivity of SnO2- and WO3-based chemiresistive sensors to ethylene gas
Author Affiliations +
Abstract
Two types of MOx sensor structures, SnO2 and WO3, of different thicknesses were synthesized on top of the interdigitated Au electrodes and used for the measurements of the ethylene gas. The SEM micrographs revealed inhomogeneities of the WO3 layer and the presence of cracks on the edges of Au electrodes which correlates with the lack of reproducibility of the WO3 sensors. Both sensor structures showed a significant sensitivity to ethylene gas: the sensitivities of both MOx-types were higher at higher temperatures which was more evident in the case of SnO2 structure. The SnO2 layer had approximately 5-times higher sensitivity than the WO3 sensor of the same thickness. The saturation (T10) and desaturation (T90) times were shorter for WO3 sensors at lower temperatures while SnO2 was saturated and desaturated faster at higher temperatures. Sensors with thinner active layer possessed higher sensitivities and shorter T10 and T90 times.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Matic Krivec, Raimund Leitner, Roland Waldner, Johanna Gostner, Florian Überall, "The effect of sensor temperature and MOx layer thickness on the sensitivity of SnO2- and WO3-based chemiresistive sensors to ethylene gas", Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 951713 (21 May 2015); doi: 10.1117/12.2179235; https://doi.org/10.1117/12.2179235
PROCEEDINGS
8 PAGES


SHARE
Back to Top