21 May 2015 High temperature stability of ScxAl1-xN (x=0.27) thin films
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Abstract
The stability of piezoelectric scandium aluminium nitride (ScxAl1-xN) thin films with x= 27% was investigated after post deposition annealings up to 1000°C. The ScxAl1-xN thin films targeted for applications in micro-electromechanical systems (MEMS) were deposited close to room-temperature applying DC magnetron sputtering. Varying deposition parameters yielded films with different microstructural properties and piezoelectric constants. Upon annealing, the crystalline quality of thin films with c-axis orientation increased, as found via characterization techniques such as X-ray diffractometry and fourier transform infrared absorbance measurements. Additionally, piezoelectric constants after annealing steps up to 1000°C are reported as obtained via a Berlincourt measurement principle. Furthermore, modifications in chemical composition during temperature loads up to 1000°C were recorded by thermal effusion measurements.
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P. M. Mayrhofer, P. M. Mayrhofer, A. Bittner, A. Bittner, U. Schmid, U. Schmid, "High temperature stability of ScxAl1-xN (x=0.27) thin films", Proc. SPIE 9517, Smart Sensors, Actuators, and MEMS VII; and Cyber Physical Systems, 95171C (21 May 2015); doi: 10.1117/12.2178503; https://doi.org/10.1117/12.2178503
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