1 June 2015 Metal silicide/Si thin-film Schottky-diode bolometers
Author Affiliations +
Proceedings Volume 9519, Nanotechnology VII; 95190K (2015); doi: 10.1117/12.2178487
Event: SPIE Microtechnologies, 2015, Barcelona, Spain
Abstract
Recently, we have demonstrated Ni silicide/poly-Si diodes as a budget alternative to SOI-diode temperature sensors in uncooled microbolometer FPAs. This paper introduces a solution still more suitable for industry: We have developed PtSi/poly-Si Schottky diodes for microbolometers. Ease of integration of the PtSi/poly-Si diode formation process into the CMOS technology, in analogy with the internal photoemission PtSi/Si IR FPAs, is the merit of the PtSi/poly-Si sensors. Now we demonstrate PtSi/poly-Si diode microbolometers and propose them as a promising solution for focal plane arrays.
© (2015) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir A. Yuryev, Kirill V. Chizh, Valery V. Chapnin, Victor P. Kalinushkin, "Metal silicide/Si thin-film Schottky-diode bolometers", Proc. SPIE 9519, Nanotechnology VII, 95190K (1 June 2015); doi: 10.1117/12.2178487; http://dx.doi.org/10.1117/12.2178487
PROCEEDINGS
9 PAGES


SHARE
KEYWORDS
Diodes

Platinum

Bolometers

Silicon

Etching

Temperature metrology

Silica

Back to Top